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IXTH200N10T
IXTQ200N10T
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
C iss
V DS = 10V, I D = 60A , Note 1
60
96
9400
S
pF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
1087
pF
1
2
3
?P
C rss
140
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 50A
R G = 3.3 Ω (External)
35
31
45
34
ns
ns
ns
ns
Terminals: 1 - Gate
e
2 - Drain
Q g(on)
Q gs
Q gd
R thJC
R thCH
V GS = 10V, V DS = 0.5 ? V DSS , I D = 50A
152
47
47
0.25
nC
nC
nC
0.27 ° C/W
° C/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A 1 2.2 2.54 .087 .102
A 2 2.2    2.6   .059  .098
b 1.0 1.4 .040 .055
b 1 1.65 2.13 .065 .084
b 2 2.87   3.12   .113  .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
I S V GS = 0V
I SM Repetitive, Pulse width limited by T JM
Characteristic Values
Min. Typ. Max.
200
500
A
A
E   15.75 16.26   .610  .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1          4.50         .177
? P 3.55 3.65 .140 .144
Q    5.89   6.40 0.232 0.252
R 4.32 5.49 .170 .216
V SD
t rr
Q RM
I RM
I F = 50A, V GS = 0V, Note 1
I F = 100A, V GS = 0V,-di/dt = 100A/ μ s
V R = 50V
76
205
5.4
1.0
V
ns
nC
A
TO-3P (IXTQ) Outline
Notes: 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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